PHP222NQ04LT,127
MOSFET N-CH 40V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel power MOSFET, part number PHP222NQ04LT-127, offers a 40 V drain-source breakdown voltage and a continuous drain current of 75 A at 25°C (Tc). This component features a low on-resistance of 2.8 mOhm maximum at 25 A and 10 V (Vgs), with a gate threshold voltage specified at 2 V (Id=1mA). The device exhibits a maximum gate charge of 93.6 nC at 5 V (Vgs) and an input capacitance (Ciss) of 7880 pF at 25 V (Vds). It is packaged in a TO-220AB through-hole configuration and can dissipate up to 300 W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power conversion.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7880 pF @ 25 V |
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