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PHP21N06LT,127

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PHP21N06LT,127

MOSFET N-CH 55V 19A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ series N-channel power MOSFET, part number PHP21N06LT-127. This device features a Drain-Source On-Resistance (Rds(on)) of 70mOhm maximum at 10A, 10V. It offers a continuous drain current of 19A at 25°C (Tc) and a Drain-Source voltage (Vdss) of 55V. The power dissipation is rated at 56W (Tc). Key parameters include a gate charge (Qg) of 9.4 nC at 5V and input capacitance (Ciss) of 650 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). The TO-220AB package is suitable for through-hole mounting. This component is utilized in applications such as power switching and motor control within the industrial and automotive sectors.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Rds On (Max) @ Id, Vgs70mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)56W (Tc)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 25 V

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