PHP160NQ08T,127
MOSFET N-CH 75V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHP160NQ08T-127 is an N-Channel power MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 75A at 25°C. The low on-resistance, specified at 5.6mOhm maximum at 25A and 10V, minimizes conduction losses. With a maximum power dissipation of 300W (Tc), it is suitable for demanding power management tasks. The PHP160NQ08T-127 utilizes a TO-220AB package for through-hole mounting, offering robust thermal performance. Typical applications include power supplies, motor control, and automotive systems. Key parameters include a gate charge (Qg) of 91 nC maximum at 10V and input capacitance (Ciss) of 5585 pF maximum at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5585 pF @ 25 V |
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