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PHP14NQ20T,127

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PHP14NQ20T,127

MOSFET N-CH 200V 14A TO220AB

Manufacturer: NXP USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

NXP USA Inc. TrenchMOS™ Series PHP14NQ20T-127 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 14 A at 25°C, with a maximum power dissipation of 125 W (Tc). The device exhibits a low on-resistance (Rds On) of 230 mOhm at 7 A and 10 V gate voltage, facilitated by a 10 V drive voltage. Key electrical parameters include a gate charge (Qg) of 38 nC (max) at 10 V and an input capacitance (Ciss) of 1500 pF (max) at 25 V. Operating from -55°C to 175°C (TJ), this MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It finds application in industries such as industrial power supplies and electric vehicle systems.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 7A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V

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