PHP101NQ03LT,127
MOSFET N-CH 30V 75A TO220ABManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PHP101NQ03LT-127 is a high-performance N-Channel Power MOSFET. Featuring a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 75 A at 25°C, this component offers a low on-resistance of 5.5 mOhm at 25 A and 10 V (Vgs). With a maximum power dissipation of 166 W at 25°C (Tc), it is suitable for demanding applications. The device utilizes Metal Oxide technology and is packaged in a TO-220AB through-hole configuration, facilitating ease of integration in power supply designs, automotive systems, and industrial motor control. Key parameters include a Gate Charge (Qg) of 23 nC at 5 V and an input capacitance (Ciss) of 2180 pF at 25 V. Operating temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V |