PHM25NQ10T,518
MOSFET N-CH 100V 30.7A 8HVSONManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHM25NQ10T-518 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100 V drain-source breakdown voltage and a continuous drain current capability of 30.7 A at 25°C (Tc), with a maximum power dissipation of 62.5 W (Tc). Its low on-resistance is rated at 30 mOhm maximum at 10 A and 10 V gate-source voltage. The device utilizes a TrenchMOS™ technology for enhanced efficiency. Key parameters include a gate charge of 26.6 nC (max) at 10 V and input capacitance of 1800 pF (max) at 20 V. The PHM25NQ10T-518 is packaged in an 8-HVSON (5x6) surface mount configuration, supplied on tape and reel. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for industrial power supplies, automotive systems, and high-power switching applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HVSON (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 20 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
