PHM21NQ15T,518
MOSFET N-CH 150V 22.2A 8HVSONManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHM21NQ15T-518. This device features a 150 V drain-source breakdown voltage and a continuous drain current of 22.2 A at 25°C (Tc). The Rds(on) is specified at a maximum of 55 mOhm at 15 A and 10 Vgs. With a gate charge of 36.2 nC (max) at 10 V and an input capacitance of 2080 pF (max) at 25 V, it offers efficient switching characteristics. The power dissipation is rated at 62.5 W (Tc). This N-Channel MOSFET is housed in an 8-HVSON (5x6) package with exposed pad for enhanced thermal performance, suitable for surface mounting. Operating temperature range is from -55°C to 150°C. This component finds application in power supply units and automotive systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HVSON (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 25 V |
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