PHM18NQ15T,518
MOSFET N-CH 150V 19A 8HVSONManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHM18NQ15T-518 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 19A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The device exhibits a low on-resistance (Rds On) of 75mOhm maximum at 12A and 10V Vgs. Its input capacitance (Ciss) is 1150pF maximum at 25V Vds, and gate charge (Qg) is 26.4 nC maximum at 10V Vgs. Packaged in an 8-HVSON (5x6) surface mount configuration, it operates across a temperature range of -55°C to 150°C (TJ). The PHM18NQ15T-518 is suitable for various industrial and automotive power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HVSON (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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