PHM15NQ20T,518
MOSFET N-CH 200V 17.5A 8HVSONManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PHM15NQ20T-518, offers a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 17.5A at 25°C (Tc). This device features a low on-resistance (Rds On) of 85mOhm maximum at 15A and 10V gate-source voltage (Vgs). The PHM15NQ20T-518 has a maximum power dissipation of 62.5W at 25°C (Tc) and a gate charge (Qg) of 40nC maximum at 10V Vgs. Input capacitance (Ciss) is rated at 2170pF maximum at 30V Vds. The component is housed in an 8-HVSON (5x6) exposed pad package, suitable for surface mounting. This MOSFET is designed for applications in power switching, motor control, and industrial power supplies. It operates within a temperature range of -55°C to 150°C (TJ). The device is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HVSON (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 30 V |
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