PHM12NQ20T,518
MOSFET N-CH 200V 14.4A 8HVSONManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHM12NQ20T-518 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 14.4A at 25°C, with a maximum power dissipation of 62.5W (Tc). The TrenchMOS™ technology ensures a low on-resistance of 130mOhm maximum at 12A and 10V Vgs. Key parameters include a gate charge (Qg) of 26nC maximum at 10V Vgs and an input capacitance (Ciss) of 1230pF maximum at 25V Vds. The PHM12NQ20T-518 is housed in an 8-HVSON (5x6) surface mount package and operates across a wide temperature range from -55°C to 150°C. This component is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-HVSON (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 25 V |
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