PHK4NQ20T,518
MOSFET N-CH 200V 4A 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHK4NQ20T-518 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 6.25W. The Rds On is specified at a maximum of 130mOhm at 4A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 26 nC (max) at 10V and an Input Capacitance (Ciss) of 1230 pF (max) at 25V. This MOSFET utilizes a TrenchMOS™ technology for enhanced performance and is housed in an 8-SOIC surface mount package, supplied on tape and reel. The operating temperature range is -55°C to 150°C. This component is suitable for use in power supply and motor control applications across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 25 V |