PHK4NQ10T,518
MOSFET N-CH 100V 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHK4NQ10T-518 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source voltage (Vdss) of 100V and a continuous drain current capability (Id) of 4A at 25°C, with a maximum Rds(on) of 70mOhm at 10V Vgs. The device utilizes TrenchMOS technology for optimized performance and offers a gate charge (Qg) of 22 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 880 pF at 25V. The PHK4NQ10T-518 is housed in an 8-SOIC package and supports surface mount installation. Its operational temperature range is from -65°C to 150°C. This MOSFET is suitable for various industrial applications including power supplies, motor control, and automotive electronics.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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