PHK28NQ03LT,518
MOSFET N-CH 30V 23.7A 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHK28NQ03LT-518 is a 30V N-Channel MOSFET designed for surface mount applications. This component features a low Rds(on) of 6.5mOhm at 14A and 10V, with a continuous drain current capability of 23.7A at 25°C (Tc). The device exhibits a gate charge (Qg) of 30.3 nC at 4.5V and an input capacitance (Ciss) of 2800 pF at 20V. The 8-SOIC package is supplied on tape and reel and supports an operating temperature range of -55°C to 150°C. This MOSFET is commonly employed in power management solutions across automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 20 V |
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