PHK24NQ04LT,518
MOSFET N-CH 40V 21.2A 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PHK24NQ04LT-518 is an N-channel power MOSFET designed for high-efficiency applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current capability of 21.2A at 25°C (Tc). With a low on-resistance of 7.7mOhm at 14A and 10V, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 6.25W (Tc) and is housed in an 8-SOIC package for surface mounting. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 2985 pF at 25V. This device is suitable for use in automotive and industrial power management systems. It operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2985 pF @ 25 V |
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