PHK12NQ10T,518
MOSFET N-CH 100V 11.6A 8SOManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHK12NQ10T-518 is an N-Channel Power MOSFET designed for high-performance switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 11.6A at 25°C. The low on-resistance (Rds On) of 28mOhm at 6A and 10V gate drive, coupled with a maximum power dissipation of 8.9W (Tc), makes it suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 35 nC and input capacitance (Ciss) of 1965 pF at 25V. The device is housed in an 8-SOIC package, facilitating surface mounting with a Tape & Reel (TR) packaging option. Operating temperature ranges from -55°C to 150°C. This MOSFET is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.9W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1965 pF @ 25 V |
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