PHD96NQ03LT,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHD96NQ03LT-118, offers a 25V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). This surface mount device, housed in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) package, features a low on-resistance of 4.95mOhm at 25A and 10V Vgs. The nominal gate charge (Qg) is 26.7 nC at 5V Vgs, with input capacitance (Ciss) peaking at 2200 pF. Its maximum power dissipation is rated at 115W (Tc). This MOSFET is suitable for applications requiring efficient power switching in automotive and industrial power management systems. The operating temperature range is from -55°C to 175°C (TJ). Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.95mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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