PHD82NQ03LT,118
MOSFET N-CH 30V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHD82NQ03LT-118 is a 30V N-Channel power MOSFET in a DPAK package. This device features a low Rds(on) of 8mOhm at 25A and 10V Vgs, enabling efficient power switching. With a continuous drain current capability of 75A (Tc) and a maximum power dissipation of 136W (Tc), it is suitable for demanding applications. Key parameters include a low gate charge of 16.7 nC at 5V Vgs and an input capacitance of 1620 pF at 25V Vds. The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial, and power supply applications. The PHD82NQ03LT-118 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
