PHD78NQ03LT,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHD78NQ03LT-118 is a high-performance N-channel Power MOSFET designed for demanding applications. This device features a 25 V drain-source voltage (Vdss) and a continuous drain current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 107 W (Tc). The low on-resistance (Rds On) of 9 mOhm at 25 A and 10 V gate-source voltage ensures efficient power transfer.
Key parameters include a gate charge (Qg) of 11 nC (Max) at 4.5 V and an input capacitance (Ciss) of 970 pF (Max) at 12 V. The device supports a wide gate drive voltage range with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2V at 1 mA. Offered in a DPAK (TO-252-3) surface mount package, the PHD78NQ03LT-118 operates across an extended temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power supplies, and general-purpose power switching applications requiring robust performance and thermal management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 12 V |
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