PHD77NQ03T,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PHD77NQ03T-118, an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 75A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 9.5mOhm at 25A and 10V, contributing to efficient power handling with a maximum power dissipation of 107W (Tc). Key parameters include a gate charge (Qg) of 17.1 nC at 10V and input capacitance (Ciss) of 860 pF at 12V, facilitating optimized switching performance. The PHD77NQ03T-118 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in various sectors including automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 12 V |
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