PHD71NQ03LT,118
TRANSISTOR >30MHZManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PHD71NQ03LT-118 is a TrenchMOS™ N-Channel Power MOSFET designed for high-current applications. This surface mount device, packaged in a DPAK (TO-252-3, DPAK), offers a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 75 A at 25°C (Tc). With a maximum power dissipation of 120 W (Tc), it features a low on-resistance (Rds On) of 10 mOhm at 25 A and 10 V. The component exhibits a gate charge (Qg) of 13.2 nC at 5 V and an input capacitance (Ciss) of 1220 pF at 25 V. It operates across a temperature range of -55°C to 175°C (TJ) and supports drive voltages from 5 V to 10 V. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 25 V |