PHD66NQ03LT,118
MOSFET N-CH 25V 66A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ series N-Channel Power MOSFET, part number PHD66NQ03LT-118. This DPAK packaged device offers a Drain-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 66A at 25°C (Tc). Featuring low on-resistance of 10.5mOhm at 25A and 10V (Vgs), it is designed for efficient power switching applications. The device has a maximum power dissipation of 93W (Tc) and a gate charge (Qg) of 12nC at 5V (Vgs). Input capacitance (Ciss) is 860pF at 25V (Vds). This MOSFET is suitable for use in automotive and industrial power control applications. It is supplied in Tape & Reel packaging and operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
