PHD45N03LTA,118
MOSFET N-CH 25V 40A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PHD45N03LTA-118 is an N-Channel TrenchMOS™ MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) rating of 40A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 21mOhm at 25A and 10V, coupled with a Gate Charge (Qg) of 19 nC at 5V, it offers low conduction losses. The device supports a wide gate drive voltage range from 3.5V to 10V and has a maximum Power Dissipation of 65W (Tc). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, it is suitable for surface mount applications. Operating temperature ranges from -55°C to 175°C (TJ). Applications for this MOSFET include automotive systems and industrial power supplies.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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