PHD37N06LT,118
MOSFET N-CH 55V 37A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PHD37N06LT-118 is an N-Channel TrenchMOS™ power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and supports a continuous drain current (Id) of 37A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The on-resistance (Rds On) is rated at a maximum of 32mOhm at 17A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 22.5 nC (max) at 5V Vgs and an Input Capacitance (Ciss) of 1400 pF (max) at 25V Vds. Operating across a temperature range of -55°C to 175°C (TJ), it is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. This component is suitable for use in power supply and motor control applications across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±13V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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