PHD36N03LT,118
MOSFET N-CH 30V 43.4A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHD36N03LT-118 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 43.4 A at 25°C. The device offers a low on-resistance (Rds On) of 17 mOhm at 25 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 57.6 W at 25°C (Tc), it is suitable for demanding thermal environments. The PHD36N03LT-118 utilizes a DPAK (TO-252-3) surface mount package for efficient board integration. Its gate charge (Qg) is 18.5 nC maximum at 10 V Vgs, and input capacitance (Ciss) is 690 pF maximum at 25 V Vds. The operating temperature range is -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
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