PHD3055E,118
MOSFET N-CH 60V 10.3A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PHD3055E-118 is an N-channel power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 10.3A at 25°C (Tc). With a maximum continuous drain current capability of 10.3A (Tc) and a power dissipation of 33W (Tc), it is suitable for demanding thermal environments. The Rds On is specified at a maximum of 150mOhm at 5.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 5.8 nC at 10V and input capacitance (Ciss) of 250 pF at 25V. The PHD3055E-118 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component finds application in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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