PHD23NQ10T,118
MOSFET N-CH 100V 23A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. presents the PHD23NQ10T-118, an N-Channel TrenchMOS™ MOSFET designed for demanding applications. This component offers a 100V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 23A at 25°C. With a maximum on-resistance (Rds On) of 70mOhm at 13A and 10V Vgs, it ensures efficient power switching. The device features a gate charge (Qg) of 22 nC at 10V and input capacitance (Ciss) of 1187 pF at 25V. Operating within a temperature range of -55°C to 175°C, this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package suitable for surface mounting. Its 100W power dissipation capability makes it suitable for power supply, automotive, and industrial control systems. The PHD23NQ10T-118 is supplied on tape and reel (TR).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1187 pF @ 25 V |
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