PHD22NQ20T,118
MOSFET N-CH 200V 21.1A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHD22NQ20T-118, features a 200V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 21.1A at 25°C (Tc). This device offers a maximum on-resistance (Rds On) of 120mOhm at 12A and 10V. The PHD22NQ20T-118 is packaged in a TO-252-3, DPAK (SC-63) for surface mounting and supports a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 30.8 nC at 10V and an input capacitance (Ciss) of 1380 pF at 25V. This component is suitable for applications in automotive and industrial power management systems. It operates within a temperature range of -55°C to 175°C (TJ) and is supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 25 V |
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