PHD21N06LT,118
MOSFET N-CH 55V 19A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc.'s TrenchMOS™ PHD21N06LT-118 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 55V drain-source breakdown voltage and a continuous drain current capability of 19A at 25°C (Tc), with a maximum power dissipation of 56W (Tc). The DPAK (TO-252-3) surface mount package facilitates efficient thermal management. Key characteristics include a low on-resistance of 70mOhm at 10A and 10V (Vgs), and a typical gate charge of 9.4 nC at 5V (Vgs). With an input capacitance (Ciss) of 650pF at 25V (Vds) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for power switching and motor control applications in industrial and automotive sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V |
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