PHD18NQ10T,118
MOSFET N-CH 100V 18A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHD18NQ10T-118. This DPAK packaged device features a 100V drain-source breakdown voltage and a continuous drain current of 18A at 25°C (Tc). With a maximum on-resistance of 90mOhm at 9A and 10Vgs, it offers efficient switching. Key parameters include a gate charge of 21 nC and input capacitance of 633 pF at 25V. The device supports a gate-source voltage range of ±20V, with a threshold voltage of 4V at 1mA. Rated for 79W power dissipation at 25°C (Tc), it operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power systems.
Additional Information
Series: TrenchMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
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