PHD110NQ03LT,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PHD110NQ03LT-118, an N-Channel TrenchMOS™ Power MOSFET designed for demanding applications. This component features a 25V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 115W (Tc). The low on-resistance of 4.6mOhm is achieved at 25A and 10V (Vgs), providing efficient power transfer. Key parameters include a gate charge (Qg) of 26.7 nC at 5V (Vgs) and an input capacitance (Ciss) of 2200 pF at 25V (Vds). This device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. Operating temperature ranges from -55°C to 175°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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