PHD108NQ03LT,118
MOSFET N-CH 25V 75A DPAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc.'s TrenchMOS™ PHD108NQ03LT-118 is a high-performance N-Channel MOSFET designed for demanding power applications. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 187W (Tc). The low on-resistance of 6mOhm at 25A and 10V drive voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 16.3 nC (max) at 4.5V and input capacitance (Ciss) of 1375 pF (max) at 12V. The PHD108NQ03LT-118 utilizes a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting and operates across a wide temperature range of -55°C to 175°C. This component is suitable for industries including automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 12 V |
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