PHB38N02LT,118
MOSFET N-CH 20V 44.7A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHB38N02LT-118 is a 20V N-Channel MOSFET designed for high-efficiency power switching applications. This component features a low Rds(on) of 16mOhm at 25A and 5V Vgs, facilitating minimal conduction losses. With a continuous drain current capability of 44.7A (Tc) and a maximum power dissipation of 57.6W (Tc), it is well-suited for demanding power management tasks. The device operates across a wide temperature range of -55°C to 175°C. Its D2PAK (TO-263-3) surface mount package ensures robust thermal performance and ease of integration into automated assembly processes. Key electrical characteristics include a gate charge of 15.1 nC at 5V and input capacitance of 800 pF at 20V. This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 57.6W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V |
| Vgs (Max) | 12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 20 V |
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