PHB23NQ10LT,118
MOSFET N-CH 100V 23A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHB23NQ10LT-118. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 23A at 25°C (Tc). The Rds On is specified at a maximum of 72mOhm at 10A and 10V Vgs. Gate charge (Qg) is 49 nC maximum at 10V Vgs, and input capacitance (Ciss) is 1704 pF maximum at 25V Vds. The MOSFET is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB for surface mounting, supplied on tape and reel. Maximum power dissipation is 98W (Tc) with an operating junction temperature range of -55°C to 175°C. This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 98W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1704 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
