PHB225NQ04T,118
MOSFET N-CH 40V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHB225NQ04T-118, is engineered for high-efficiency power switching applications. This device features a 40V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The optimized trench technology delivers a low on-resistance of 3.1mOhm at 25A and 10V (Vgs), coupled with a gate charge (Qg) of 94 nC at 10V. The PHB225NQ04T-118 utilizes a TO-263-3, D2PAK surface mount package for robust thermal management. Its specifications make it suitable for demanding applications in automotive, industrial power supplies, and motor control systems requiring efficient power conversion. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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