PHB222NQ04LT,118
MOSFET N-CH 40V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHB222NQ04LT-118 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The PHB222NQ04LT-118 offers a low Rds On of 2.8 mOhm at 25 A and 10 V, facilitated by a 4.5V to 10V drive voltage range. Key electrical characteristics include a gate charge (Qg) of 93.6 nC at 5 V and input capacitance (Ciss) of 7880 pF at 25 V. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. Operating temperature ranges from -55°C to 175°C (TJ). This device is commonly utilized in automotive power management, industrial motor control, and power supply designs. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 93.6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7880 pF @ 25 V |
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