PHB193NQ06T,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHB193NQ06T-118 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The low on-resistance is specified at 4 mOhm maximum at 25 A and a gate-source voltage (Vgs) of 10 V.
Key parameters include a gate charge (Qg) of 85.6 nC maximum at 10 V and an input capacitance (Ciss) of 5082 pF maximum at 25 V. The device operates with a drive voltage of 10 V for optimal Rds On performance and has a maximum gate-source voltage (Vgs) of ±20 V. The threshold voltage (Vgs(th)) is 4 V maximum at 1 mA. This MOSFET utilizes Metal Oxide technology and is provided in a surface mount D2PAK package (TO-263-3, D2PAK) on Tape & Reel. It is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 85.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5082 pF @ 25 V |
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