PHB153NQ08LT,118
MOSFET N-CH 75V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. presents the PHB153NQ08LT-118, a TrenchMOS™ series N-channel power MOSFET. This device features a 75V drain-source voltage and offers a continuous drain current of 75A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). Key electrical characteristics include a low on-resistance of 5.5mOhm at 25A and 10V, and a gate charge of 95 nC at 5V. The input capacitance (Ciss) is rated at 8770 pF at 25V. Designed for surface mounting, it is supplied in a D2PAK package (TO-263-3, D2PAK). The operating temperature range is -55°C to 175°C (TJ). This component is utilized in applications such as automotive, industrial power supplies, and motor control.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8770 pF @ 25 V |
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