PHB145NQ06T,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. PHB145NQ06T-118 is a TrenchMOS™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C (Tc). The low on-resistance of 6mOhm at 25A and 10V gate drive minimizes conduction losses. With a maximum power dissipation of 250W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 64.7 nC and an input capacitance (Ciss) of 3825 pF at 25V. The component is supplied in a D2PAK (TO-263-3) surface-mount package, offered on tape and reel. This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 64.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3825 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
