PHB129NQ04LT,118
MOSFET N-CH 40V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHB129NQ04LT-118 is a high-performance N-channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The low on-resistance of 5mOhm @ 25A, 10V, coupled with a gate charge (Qg) of 44.2 nC @ 5V and input capacitance (Ciss) of 3965 pF @ 25V, ensures efficient switching characteristics.
The PHB129NQ04LT-118 is housed in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied in Tape & Reel (TR) for automated assembly. Its robust construction allows for operation within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for power management solutions in automotive, industrial, and consumer electronics sectors. Key electrical parameters include a gate-source voltage (Vgs) range of ±15V and a threshold voltage (Vgs(th)) of 2V @ 1mA.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 44.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3965 pF @ 25 V |
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