PHB11N06LT,118
MOSFET N-CH 55V 10.3A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PHB11N06LT-118 is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 10.3A at 25°C, with a maximum power dissipation of 33W (Tc). The Rds On is specified at 130mOhm maximum at 5.5A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 5.2 nC maximum at 5V Vgs and Input Capacitance (Ciss) of 330 pF maximum at 25V Vds. The device is housed in a TO-263-3, D2PAK package, suitable for surface mount applications. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is utilized across various industries including automotive, industrial, and consumer electronics for power switching and motor control applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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