PHB112N06T,118
MOSFET N-CH 55V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHB112N06T-118. This device features a 55 V drain-source breakdown voltage and a continuous drain current capability of 75 A at 25°C (Tc). With a low on-resistance of 8 mOhm maximum at 25 A and 10 V Vgs, it offers efficient power switching. The PHB112N06T-118 is housed in a TO-263-3, D2PAK surface mount package. Key electrical parameters include a gate charge (Qg) of 87 nC maximum at 10 V and input capacitance (Ciss) of 4352 pF maximum at 25 V. This MOSFET supports a maximum continuous drain current of 75 A and a power dissipation of 200 W (Tc). It is suitable for applications requiring high current handling and efficient switching, commonly found in power supply units, motor control, and automotive electronics. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4352 pF @ 25 V |
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