PHB110NQ08LT,118
MOSFET N-CH 75V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHB110NQ08LT-118, is a high-performance component designed for demanding applications. This device features a 75V drain-source voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The PHB110NQ08LT-118 offers a low on-resistance of 8.5mOhm at 25A and 10V Vgs, facilitated by a 10V gate drive. Key parameters include a gate charge of 127.3 nC at 10V and an input capacitance of 6631 pF at 25V. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), this MOSFET operates across a temperature range of -55°C to 175°C (TJ). It is commonly utilized in automotive and industrial power management systems. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 127.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6631 pF @ 25 V |
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