PHB108NQ03LT,118
MOSFET N-CH 25V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ N-Channel MOSFET, part number PHB108NQ03LT-118, is a high-performance power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 25 V and a continuous drain current (Id) of 75 A at 25°C (Tc), with a maximum power dissipation of 187 W (Tc). The low on-resistance (Rds On) of 6 mOhm at 25 A and 10 V drive ensures efficient power transfer.
With a gate charge (Qg) of 16.3 nC at 4.5 V and input capacitance (Ciss) of 1375 pF at 12 V, this MOSFET offers optimized switching characteristics. The PHB108NQ03LT-118 is housed in a TO-263-3, D2PAK package for surface mounting, enabling compact and robust designs. It is suitable for applications in automotive, industrial power supplies, and motor control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1375 pF @ 12 V |
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