PHB101NQ04T,118
MOSFET N-CH 40V 75A D2PAKManufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. TrenchMOS™ PHB101NQ04T-118 is a high-performance N-channel MOSFET designed for demanding applications. This MOSFET features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) capability of 75A at 25°C (Tc), with a maximum power dissipation of 157W (Tc). Its low on-resistance of 8mOhm at 25A and 10V gate drive voltage ensures efficient power handling. The device boasts a low gate charge (Qg) of 36.6 nC at 10V and an input capacitance (Ciss) of 2020 pF at 25V. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK) configuration and supplied on tape and reel, the PHB101NQ04T-118 is suitable for high-power switching and motor control applications across various industrial sectors. It operates within an extended temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage of ±20V.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 36.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |
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