PH9930L,115
MOSFET N-CH 30V 63A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH9930L-115 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V Drain-Source voltage rating and a continuous drain current capability of 63A at 25°C (Tc). The device offers a low on-resistance of 9.9mOhm maximum at 25A and 10V, with a typical gate charge of 13.3 nC at 4.5V. Its high power dissipation of 62.5W (Tc) and operating temperature range of -55°C to 150°C (TJ) make it suitable for power management solutions. The PH9930L-115 is housed in a surface-mount LFPAK56, Power-SO8 package (SC-100, SOT-669) and is supplied on tape and reel. This MOSFET is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1565 pF @ 12 V |
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