PH9030AL,115
MOSFET N-CH 30V 61A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ N-channel MOSFET, part number PH9030AL-115, features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 61 A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 8 mOhm at 15 A and 10 V Vgs. The input capacitance (Ciss) is 1006 pF maximum at 12 V Vds, with a gate charge (Qg) of 17.8 nC maximum at 10 V Vgs. The threshold voltage (Vgs(th)) is 2.15 V maximum at 1 mA. Packaged in LFPAK56 (also known as Power-SO8 or SC-100, SOT-669) for surface mounting, this component is supplied on tape and reel. It is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1006 pF @ 12 V |
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