PH9025L,115
MOSFET N-CH 25V 66A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH9025L-115 is an N-Channel Power MOSFET designed for demanding applications. This component features a 25V drain-source voltage and a continuous drain current capability of 66A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The device exhibits a low on-resistance of 9mOhm at 10A and 10V, facilitated by its N-Channel configuration. Key parameters include a gate charge (Qg) of 12.8 nC at 4.5V and input capacitance (Ciss) of 1414 pF at 30V. It supports a gate-source voltage range of ±20V, with a threshold voltage (Vgs(th)) of 2.15V at 1mA. The PH9025L-115 is housed in a compact LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount package, suitable for high-density designs. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1414 pF @ 30 V |
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