PH8030L,115
MOSFET N-CH 30V 76.7A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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The NXP USA Inc. PH8030L-115 is an N-Channel TrenchMOS™ Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 76.7A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The device exhibits a low on-resistance (Rds On) of 5.9mOhm at 25A and 10V. Key parameters include a gate charge (Qg) of 15.2 nC at 4.5V and input capacitance (Ciss) of 2260 pF at 12V.
Designed for surface mounting, the PH8030L-115 is housed in an LFPAK56, Power-SO8 package, also known as SC-100 or SOT-669. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2.15V at 1mA. This MOSFET is commonly utilized in automotive, industrial power control, and consumer electronics sectors. The PH8030L-115 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 12 V |
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