PH7030L,115
MOSFET N-CH 30V 68A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH7030L-115 is an N-Channel power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 68A at 25°C (Tc), with a maximum power dissipation of 62.5W (Tc). The low on-resistance of 7.9mOhm at 10A and 10V gate-source voltage ensures minimal conduction losses. The PH7030L-115 utilizes a LFPAK56, Power-SO8 package for efficient thermal management and is suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 12 nC maximum at 5V and an input capacitance (Ciss) of 1362 pF maximum at 10V. This component is commonly found in power management, automotive, and industrial applications requiring robust power switching. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1362 pF @ 10 V |
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