PH5525L,115
MOSFET N-CH 25V 81.7A LFPAK56Manufacturer: NXP USA Inc.
Categories: Single FETs, MOSFETs
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NXP USA Inc. TrenchMOS™ PH5525L-115 is an N-Channel Power MOSFET designed for demanding applications. This component features a 25V drain-source voltage and a continuous drain current capability of 81.7A at 25°C, with a maximum power dissipation of 62.5W. The device offers a low on-resistance of 5.5mOhm at 25A and 10V. Key electrical parameters include a gate charge of 16.6 nC at 4.5V and an input capacitance of 2150 pF at 12V. Operating across a temperature range of -55°C to 150°C, the PH5525L-115 is housed in a compact LFPAK56, Power-SO8 package, suitable for surface mounting. This MOSFET is commonly utilized in automotive, industrial power control, and high-efficiency power supply designs.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 81.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 12 V |
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